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| MITSUBISHI SEMICONDUCTOR MGFC45V5964A 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9~6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Until : millimeters (inches) 240.3 (0.9450.012) FEATURES (TARGET) Internally matched to 50 () system High output power P1dB=32W (TYP.) @f=5.9~6.4GHz High power gain GLP=9.0dB (TYP.) @f=5.9~6.4GHz High power added efficiency P.A.E.=33% (TYP.) @f=5.9~6.4GHz Low distortion [item -51] IM3= -42dBc (MIN.) @Po=34.5dBm S.C.L. R1.2 (0.0240.006) 0.60.15 APPLICATION 5.9~6.4GHz band amplifiers 20.40.2 (0.8030.008) 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=8A Rg=25 Refer to Bias Procedure GF-38 (1) GATE (2) Source (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 Ratings -15 -15 20 -80 168 150 175 -65 ~ +175 Unit V V A mA mA consideration to safety when making your circuit designs, < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due W C C with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS Symbol IDSS Gm VGS (off) P1dB GLP P.A.E. IM3 *2 Rth (ch-c) Parameter Saturated drain current Transconductance Gate to Source cut-off voltage Output power at 1dB gain compression Linear power gain Power added efficiency 3rd order IM distortion Thermal resistance *1 Vf method VDS=10V, ID=8A, f=5.9~6.4GHz Test conditions VDS=3V, IGS=0V VDS=3V, ID=8V VDS=3V, ID=160mA Limits Min. -- -- -2 44 9 -- -42 -- Typ. 24 8 -- 45 9.5 34 -45 0.8 Max -- -- -5 -- -- -- -- 1.0 Unit V S V dBm dB % dBc C/W *1 : Channel to case *2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=6.4GHz, f=10MHz MITSUBISHI ELECTRIC |
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